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Spin Transfer Technologies to Detail Advanced 20nm MRAM Milestones at SPIE Conference

WHAT: Chief Technology Officer Mustafa Pinarbasi of Spin Transfer Technologies (STT), developer of a proprietary Orthogonal Spin Transfer Magneto-Resistive Random Access MRAM technology (OST-MRAM™), will be presenting an invited paper at the SPIE Nanoscience [...]

Spin Transfer Technologies Expands Management Team

Appointment of Two Senior Executives to Help Drive Market Entry FREMONT, Calif. – July 19, 2016 — Spin Transfer Technologies, Inc. (STT), a leading developer of Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM™), [...]

Spin Transfer Technologies Responds to Crocus Press Release Regarding US Patent and Trademark Office (USPTO) Ruling

USPTO Decision not expected to have material impact 9-December-2015 FREMONT, Calif. – 9-December-2015— Spin Transfer Technologies, Inc. (STT), a leading developer of breakthrough Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM™), today notes a [...]

Spin Transfer Technologies Names Technology Industry Veteran Pete Magowan to the Board of Directors

FREMONT, Calif. – 17-February-2015— Spin Transfer Technologies, Inc. (STT), a leading developer of breakthrough Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM™), today announced that Pete Magowan, a seasoned global technology executive and investor, [...]

Spin Transfer Technologies Raises $70 Million To Accelerate Commercial Development

FREMONT, Calif. – 09-October-2014— Spin Transfer Technologies, Inc. (STT), a leading developer of breakthrough Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM™), today announced that it has successfully raised $70 million to accelerate commercial [...]

Spin Transfer Technologies Appoints Industry Veteran Nelson Chan to Board of Directors

FREMONT, Calif. – October 23, 2013— Spin Transfer Technologies, Inc. (STT), a leading developer of breakthrough orthogonal spin transfer magnetoresistive random access memory technology (OST-MRAM™), today announced that Nelson Chan has been appointed to the [...]