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Spin Transfer Technologies to Discuss the Looming SRAM Catastrophe at Semicon West

July 9, 2018

Spin Transfer Technologies Appoints Industry Veteran Andrew Peng to Vice President Business Development, Greater China

May 29, 2018

Spin Transfer Technologies Announces Breakthrough MRAM Technology for SRAM and DRAM Applications

– Precessional Spin Current™ Structure Provides 40-70 Percent Boost to Spin-torque Efficiency of Any pMTJ — Improving Data Retention by Over 10,000 Times While Reducing Write Current –
April 30, 2018

Silicon Valley Startup Set to Disrupt Global Semiconductor Market

– Spin Transfer Technologies Precessional Spin Current™ Structure Positions MRAM as the Leading Memory for Mobile, Datacenters, AI and More –
April 30, 2018

Spin Transfer Technologies to Discuss Enhanced STT-MRAM Efficiency Utilizing Precessional Spin Current™ at Intermag

April 19, 2018

Spin Transfer Technologies to Discuss Unleashing MRAM as Persistent Memory at SEMICON China 2018

March 8, 2018