Spin Transfer Technologies’ (STT’s) patented OST-MRAM™ technology provides significant performance and scalability improvements over current spin transfer MRAM designs which involve thermodynamic processes in the initiation of magnetic switching.

STT’s OST-MRAM™ utilizes an innovative orthogonal orientation between the polarizing magnetic vector and free magnetic vector of the memory cell
results in deterministic switching of magnetic orientation, which can be accomplished in a significantly shorter amount of time, using a much smaller current than other spin transfer approaches.

These characteristics have direct impact on write speed and power consumption, broadening the application areas and increasing the attractiveness of this memory technology.

See list of selected technical papers.

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