Advanced MRAM Technology for High Performance, Low Power Applications.

New York University and Allied Minds have teamed to establish Spin Transfer Technologies (STT) to develop and commercialize advanced spin transfer magnetoresistive random access memory (MRAM) technologies.

MRAM is showing great promise in delivering fast read and write performance with non-volatility in a single technology. STT’s proprietary orthogonal spin transfer MRAM (OST-MRAM™) has demonstrated that read and write, or switching, performance can be accomplished much faster and with much less energy than in conventional spin transfer MRAM approaches.

OST-MRAM technology has significant implications for the development of spin transfer MRAM devices and products, including ultra-fast switching times, very low switching energy, much improved endurance, and greater scalability to smaller dimensions.

Contact us to learn more.