Welcome to Spin Transfer Technologies, LLC

Spin Transfer Technologies (STT) is developing novel magnetoresistive random access memory (MRAM) devices for non-volatile computer memory. This class of memory devices utilizes a quantum mechanical effect known as spin transfer to manipulate magnetic orientations over small distances. Our patented technology could provide significant advantage over competing approaches and enable our devices to have higher write speeds, lower power consumption, and is scalable to next generation process technologies.

The STT technology is being developed by Professor Andrew Kent of New York University.