New York University and Allied Minds have teamed to establish Spin Transfer Technologies (STT) to develop and commercialize advanced spin transfer magnetoresistive random access memory (MRAM) technologies.
MRAM is showing great promise in delivering fast read and write performance with non-volatility in a single technology. STT’s proprietary orthogonal spin transfer MRAM (OST-MRAM™) has demonstrated that read and write, or switching, performance can be accomplished much faster and with much less energy than in conventional spin transfer MRAM approaches.
OST-MRAM technology has enormous implications for the development of spin transfer MRAM devices and products, including ultra-fast switching times, very low switching energy, virtually unlimited endurance, and greater scalability to smaller dimensions.